样品照片：

TEM：

MBE设备图片：

Raman:

PL:

不同生长方法样品区别：

HRTEM:

Description:

World's first molecular beam epitaxy (MBE) grown MoS₂ monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below). MBE growth of MoS₂ monolayers take place in a MBE chamber at a base pressure of 8E^-9 Torr and deposition rate is extremely slow (5-100 atoms per second) to reach structural perfection. Typical MBE growth produces monolayer thick MoS₂ isolated triangles on double-side polished c-cut sapphire. Currently, MBE MoS₂ is only offered on sapphire substrates but in the near future our MBE substrates will also include mica, graphite, and gold.  

Sample Properties：

Sample size：1cm x 1cm square shaped

Substrate type：Double side polished c-cut sapphire

Coverage：Isolated triangles but may reach some continuity

Electrical properties：Direct gap excitonic semiconductor

Crystal structure：Hexagonal Phase

Unit cell parameters：a = b = 0.33 nm, c = 1.292 nm, α = β = 90°, γ = 120°

Production methodMolecular beam epitaxy (MBE)

Characterization methods：Raman, photoluminescence, TEM, XRD, and others