样品照片：

光学显微镜照片：

TEM：

MBE设备图片：

Raman:

PL:

不同生长方法样品区别：

HRTEM：

Description:

World's first molecular beam epitaxy (MBE) grown MoSe₂ monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below). MBE growth of MoSe₂ monolayers take place in a MBE chamber at a base pressure of 8E^-9 Torr and deposition rate is extremely slow (5-100 atoms per second) to reach structural perfection. Typical MBE growth produces monolayer thick MoSe₂ isolated triangles on double-side polished c-cut sapphire. Currently, MBE MoSe₂ is only offered on sapphire substrates but in the near future our MBE substrates will also include mica, graphite, and gold.