CVD-2H-MoTe2全覆盖连续薄膜(进口)
货号:100888 编号:MK1088
CAS号:12058-20-7 规格:1*1cm2
包装:原包装进口 保质期:
保存条件:
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Characteristics of CVD grown 2H (semiconducting phase) MoTe2 sheets
Product Description
2H semiconducting phase few-layer MoTe2 (3-6 layers) has been grown on 1cm2 size c-cut sapphire substrates using low-pressure chemical vapor deposition technique (LPCVD). Grown sheets can also be transferred onto other substrates such as quartz, SiO2/Si, PET, metals, and others on request. Few-layer MoTe2 reach full area coverage on sapphire, exhibit outstanding environmental stability, surface smoothness, and uniformity. Grown sheets are environmentally stable and exhibit band gap between bulk (0.6 eV) and monolayer (1.1 eV).
Special note: Despite extensive R&D efforts, CVD grown monolayer MoTe2 are environmentally rather unstable due to uncontrollable defect characteristics. We are unable to provide monolayer thick MoTe2 at this time.