CVD-WSe2单层薄膜(进口)

货号:100885 编号:MK1085

CAS号:12067-46-8 规格:1片/包装

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货号:100885 编号:MK1085

CAS号:12067-46-8 规格:1片/包装

包装:原包装进口 保质期:

保存条件:

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Description:

This product contains full area coverage WSe2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick WSe2 sheet. Synthesized full area coverage monolayer WSe2 is highly luminescent and Raman spectroscopy studies also confirm the monolayer thickness (please see the technical specifications)

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). Our samples are always highly luminescent and highly crystallized

Sample Properties

Sample size1cm x 1cm square shaped
Substrate type(0001) c-cut sapphire
CoverageFull coverage monolayer
Electrical properties1.62 eV Direct Bandgap Semiconductor
Crystal structureHexagonal Phase
Unit cell parametersa = b = 0.327 nm, c = 1.295 nm, α = β = 90°, γ = 120°
Production methodLow pressure Chemical Vapor Deposition (LPCVD)
Characterization methodsRaman, photoluminescence, TEM, EDS

 

Specifications

Publications:

Enabling valley selective exciton scattering in monolayer WSe2 through upconversion, Nature Communications, 8,14927 (2017) 
doi:10.1038/ncomms14927

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