CVD-SnS2单层薄膜(进口)

货号:100882 编号:MK1082

CAS号:1315-01-1 规格:1片/包装

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货号:100882 编号:MK1082

CAS号:1315-01-1 规格:1片/包装

包装:原包装进口 保质期:

保存条件:

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This product contains full area coverage SnS2 monolayers on c-cut sapphire substrates. Sample size measures 1cm in size and the entire sample surface contains monolayer thick SnS2 sheet. Synthesized full area coverage monolayer SnS2 is highly crystalline.

Growth method: Our company synthesizes these monolayers using chemical vapor deposition (CVD) using highest purity (6N) gases and precursors in semiconductor grade facilities to produce crystalline and large domain size samples (1-50um). This is unlike commonly used MOCVD process wherein defects are very very large and domain sizes are small (10nm-500nm). 

Sample Properties

Sample size1cm x 1cm square shaped
Substrate typeSapphire c-cut (0001)
CoverageFull monolayer coverage
Electrical properties2.2 eV Indirect Gap Semiconductor
Crystal structureHexagonal Phase
Unit cell parameters

a = b = 0.362, c = 0.590 nm, α = β = 90°, γ = 120°

Production methodLow Pressure Chemical Vapor Deposition (LPCVD)
Characterization methodsRaman, angle resolved Raman spectroscopy, photoluminescence, absorption spectroscopy TEM, EDS

 

Specification.

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