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Bi₂TeO₂ is a vdW layered material belonging to Bismuth oxychalcogenide material systems. It crystallizes in I4/mmm which is commonly known as anti-ThCr2Si2 structure.  The crystal structure of Bi2O2Te consists of [Bi2O2]2+ layers and Te2- square net layers alternately stacked along the c-axis. It exhibits an electronic band gap of 0.23 eV. While Bi2TeO2 has rather large thermoelectric efficiency, its quantum properties mainly remain unknown.

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