钽镍硫晶体Ta2NiS5照片：

原子结构模型：

Raman光谱：

Properties of Ta2NiS5 crystals

Product Description

Ta₂NiS₅ is a narrow gap semiconductor (Eg~0.39 eV) with suspected exciton insulator behavior like observed in its sister compound Ta₂NiS₅. Excitonic insulators are novel material systems exhibiting correlated electronic phases. Condensation of excitons to its ground state happens for a specific condition when the exciton binding energy (Eb) is larger than the band gap (Eg). The excitonic condensation in semiconductors occurs through a Bose-Einstein condensation process, while the condensation in semimetals occurs through the Bardeen-Cooper-Schrieffer (BCS) process.  The spontaneous band hybridization caused by the Coulomb attraction between the orthogonal conduction (electron) and valence (hole) bands opens the bandgap and drives the system into the insulating state

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