样品名称 | 铟硒溴晶体InSeBr |
性质 | 各向异性半导体 |
带隙 |
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参数 | 尺寸:~3-6 mm |
应用 | 半导体电子器件,传感器-探测器,非线性光学,STM-AFM实验,光学器件等研究 |
其他信息 | 详情请发邮件至:mknano@126.com |
铟硒溴晶体InSeBr照片:
InSeBr (Indium selenide bromide) is a ternary alloy layered semiconductor with an optical band gap of 2.1 eV in the bulk limit. It is one of the newest member of 2D semiconductor family and its' optical, electronic, or magnetic properties remain largely unknown. Based on our optical absorption spectroscopy datasets, its optical gap is at 2.1 eV and exhibits p-type electronic behavior. Selective area electron diffraction (SAED) datasets show it crystallize in monoclinic (P21/c) with lattice parameters a=0.71 nm, b=0.75nm, and c=0.83nm; b=~118.2 degrees.
The properties of InSeBr crystals by 2Dsemiconductors:
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