Cr2Ge2Te6 is a layered ferromagnetic semiconductor which is close to 2D Heisenberg ferromagnet with Curie temperature (Tc) values at 65K in bulk. It exhibits layered dependent Curie temperature, coercive fields, and magnetic properties. Our Cr2Ge2Te6 crystals are grown by flux-zone or chemical vapor transport techniques with 99.9999% confirmed purity and defect free nature. It comes with guaranteed ferromagnetic response and highest purity as well as crystallinity. 

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