黑砷晶体-Black Arsenic
货号:100835 编号:MK10835
CAS号:7440-38-2 规格:
包装:原包装进口 保质期:3个月+
保存条件:室温密封保存
库存: 0 件
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货号:100835 编号:MK10835
CAS号:7440-38-2 规格:
包装:原包装进口 保质期:3个月+
保存条件:室温密封保存
请选择规格参数
样品名称 | 黑砷晶体Black Arsenic |
性质 | 近红外各向异性半导体 |
带隙 | 0.3eV |
参数 | 尺寸:~7-10mm |
应用 | 半导体电子器件,传感器-探测器,非线性光学,STM-AFM实验,光学器件等研究 |
其他信息 | 详情请发邮件至:mknano@126.com |
黑砷晶体Black Arsenic照片:
first and only commercially available black arsenic crystals.
Our black arsenic crystals have been grown without any mercury or phosphorus contamination and comes at confirmed 6N purity. These crystals measure up to 1cm in size.
Black arsenic is a layered semiconductor with extreme in-plane anisotropy. Similar to its cousin black phosphorus, it exhibits high electronic mobility, thermal conductivity, and anisotropic excitons along or across the arsenic chain direction. Black arsenic has puckered layered structure much similar black phosphorus. Our black arsenic crystals has been synthesized through our own innovation high pressure anvil cell technique. Our crystal contain no phosphorus or mercury contaminations. Our Raman and XRD peaks show sharp and discrete peaks related to black arsenic sheets.
The physical properties of black arsenic
XRD:
Raman:
Please note that secondary black phosphorus or black arsenic phosphorus phases are anticipated in small amounts. Coexistence of these phases are normal and anticipated.
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