硒化钽钨晶体TaWSe2

货号:100824 编号:MK10824

CAS号: 规格:

包装:标准包装 保质期:3个月+

保存条件:室温密封保存

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货号:100824 编号:MK10824

CAS号: 规格:

包装:标准包装 保质期:3个月+

保存条件:室温密封保存

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 样品名称 进口硒化钽钨晶体TaWSe
 性质 半导体
带隙 待实验确定
  参数

 尺寸:其他尺寸可定制

颜色:金属光泽

 应用 STM-AFM实验,物理性能等研究
 其他信息

 详情请发邮件至mknano@126.com.

硒化钽钨晶体TaWSe2照片:


Product Description

Layered TaWSe2 ternary alloys have been synthesized at 50%-50% W (tungsten) to Ta (tantalum) ratios. While WSe2 is a direct gap semiconductor with high excitonic binding energy and valleytronic properties, 2H-TaSe2 is a metal with charge density waves (incommensurate CDW). It has superconducting transition at around below 1K. These two extreme compositions were alloyed to create 1:1 W:Ta ratio vdW crystals. These crystals are completely new to the community in the bulk as well as monolayer form and many of its properties are awaiting to be explored.

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