样品名称 | 钼钨碲合金MoWTe2晶体 |
性质 | 半导体 |
带隙 | 待实验确定 |
参数 | 尺寸: |
应用 | 半导体电子器件,传感器-探测器,非线性光学,STM-AFM实验,光学器件等研究 |
其他信息 | 详情请发邮件至:mknano@126.com. |
钼钨碲合金MoWTe2晶体:
The first MoWTe2 ternary alloy. Large single crystal defect free molybdenum tungsten ditelluride (MoxW(1-x)Te2) crystals have been developed in our facilities and they have x=0.3,0.5, and 0.7 stoichiometric ratios. As they are semiconductor grade (99.9995% purity and perfect stoichiometry), you do not need to worry about amorphous phase, defects, or contamination. As the crystal size is large, they are ideal for exfoliating large monolayers. Single crystal MoWTe2 are very easy to exfoliate and the monolayer yield is high. Our crystals are grown using two different techniques through chemical vapor transport (CVT) or flux zone growth (see description of these two methods below) and their composition values were determined by XPS, SAED, and EDS measurements.. These crystals all possess extremely narrow PL bandwidths, display clean PL spectra, high carrier mobility, extremely clean and sharp XRD peaks, and negligible amount of defects (see published results as well as CVT vs. Flux based methods below ). These crystals come with guaranteed alloying and valleytronic response, sharp PL, and good electronic response.
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