锑硫碘晶体-SbSI

货号:100864 编号:MK1064

CAS号: 规格:

包装:原包装进口,真空包装 保质期:密封保存6个月+

保存条件:真空密封保存

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碳纳米笼

货号:100864 编号:MK1064

CAS号: 规格:

包装:原包装进口,真空包装 保质期:密封保存6个月+

保存条件:真空密封保存

请选择规格参数

  • 尺寸:~1cm
购买数量

 样品名称 锑硫碘晶体-SbSI (antimony sulfoiodide )
  性质 铁磁半导体
 带隙 待实验确定
  参数

 尺寸:~1cm

  应用 半导体电子器件,传感器-探测器,非线性光学,STM-AFM实验,光学器件等研究
  其他信息

 详情请发邮件至:mknano@126.com.

锑硫碘晶体-SbSI照片:


Product Description

     Commercially available first ferroelectric semiconductor SbSI 1D and 2D vdW crystals. Bulk V-VI-VII semiconductor has a orthorhombic structure with the space group of Pna21, and crystallises in 1D chains which are held together by van der Waals interaction. 1D crystals by exfoliation or mechanical cleavage. It has been shown to be luminescent semiconductor in the bulk from (Eg~1.6 eV), however material characteristics of monolayer thick SbSI still remain unknown. It has been shown that these materials possess good ferroelectric behavior (ferroelectric response in monolayers is still unknown), exhibit photoferroic effects, good photoluminescence and light-matter characteristics, and electronic behavior. SbSi crystals have been synthesized using flux zone which similar to chemical vapor transport technique except no transport agents are used to achieve high crystalline and and contamination free materials. Typical product measures nearly 1cm in size. It is extremely easy to exfoliate onto desired substrates. They are environmentally stable and suitable for electronic, optical, and ferroelectrics research.

Material characteristics

(1) Ferroelectric semiconductor

(2) 2D anisotropic semiconductor

(3) High mobility semiconductor

(4) Optically luminescent 

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