The first commercial vdW Tellurium (b-phase) crystals. Layered tellurium crystals have been synthesized in perfectly vdW order through flux zone growth technique. The crystal has 99.9999% (6N) rated purity and has been crystalized in perfect atomic order.Layered tellurium (Te) has a trigonal crystal lattice (see product images) in which individual helical chains of Te atoms are stacked together by van der Waals type bonds and spiral around axes parallel to the [0001] direction at the center and corners of the hexagonal elementary cell [1-2]. Tellurene exhibits a tunable bandgap varying from nearly direct 0.31 eV (bulk) to indirect 1.17 eV (2L) and direct at 1.3 eV (1L) [3]. It has been shown to exhibit metallic behavior under certain conditions and even host DCWs. It has four (two) complex, highly anisotropic and layer-dependent hole (electron) pockets in the first Brillouin zone with an extraordinarily high hole mobility reaching up to theoretical ～1E5 cm2/Vs value [1-3]. 

Material characteristics

（1）High carrier mobility semiconductor

（2）Tunable IR semiconductor (Eg ranging from 0.3 to 1.3 eV from bulk to monolayers)

（3）2D anisotropic semiconductor   

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