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碳纳米笼
货号:100862 编号:MK1062
CAS号:13494-80-9 规格:
包装:原包装进口,真空包装 保质期:密封保存6个月+
保存条件:真空密封保存
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样品名称 | 碲Te晶体 |
性质 | 半导体 |
带隙 | 待实验确定 |
参数 | 纯度:高纯 尺寸:>1cm,其他尺寸可定制 相:α-phase |
应用 | 半导体电子器件,传感器-探测器,非线性光学,STM-AFM实验,光学器件等研究 |
其他信息 | 详情请发邮件至:mknano@126.com. |
碲晶体照片:
剥离图片:
Raman:
XRD:
The first commercial vdW Tellurium (b-phase) crystals. Layered tellurium crystals have been synthesized in perfectly vdW order through flux zone growth technique. The crystal has 99.9999% (6N) rated purity and has been crystalized in perfect atomic order.Layered tellurium (Te) has a trigonal crystal lattice (see product images) in which individual helical chains of Te atoms are stacked together by van der Waals type bonds and spiral around axes parallel to the [0001] direction at the center and corners of the hexagonal elementary cell [1-2]. Tellurene exhibits a tunable bandgap varying from nearly direct 0.31 eV (bulk) to indirect 1.17 eV (2L) and direct at 1.3 eV (1L) [3]. It has been shown to exhibit metallic behavior under certain conditions and even host DCWs. It has four (two) complex, highly anisotropic and layer-dependent hole (electron) pockets in the first Brillouin zone with an extraordinarily high hole mobility reaching up to theoretical ~1E5 cm2/Vs value [1-3].
Material characteristics
(1)High carrier mobility semiconductor
(2)Tunable IR semiconductor (Eg ranging from 0.3 to 1.3 eV from bulk to monolayers)
(3)2D anisotropic semiconductor
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