The only commercially available TlGaTe₂ vdW crystals have been synthesized at our facilities through float zone technique. TlGaTe₂ semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX₂ (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe₂, TlGaS₂, TlInS₂) and chain (TlInSe₂, TlInTe₂, TlGaTe₂) structures. Stacking of the atoms in TlGaSe₂, TlGaS₂ and TlInS₂ layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. Recently, low-temperature rhombohedral ordered phase of Tl-based III–V–VI₂ ternary chalcogenides has been predicted to be topologically nontrivial and a terminated surface with a single Dirac cone has been identified through first-principles calculations (Phys. Rev. Lett. 105, 036404). TlGaTe₂ crystals exhibit anisotropic structural, electronic, and optical properties with the band gap of 1.2 eV.

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