The only commercially available TlGaS₂ vdW crystals have been synthesized at our facilities through float zone technique. TlGaS₂ semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX₂ (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe₂, TlGaS₂, TlInS₂) and chain (TlInSe₂, TlInTe₂, TlGaTe₂) structures. Stacking of the atoms in TlGaSe₂, TlGaS₂ and TlInS₂ layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. In particular, TlGaS₂ is a 2.45 eV direct gap semiconductor with strong optical and electronic anisotropy. 

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