库存: 0 件
碳纳米笼
货号:100839 编号:MK1039
CAS号: 规格:
包装:原包装进口,真空包装 保质期:密封保存6个月+
保存条件:真空密封保存
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样品名称 | 进口铊掺杂硒化镓单晶 TlGaSe2 |
性质 | 半导体 |
带隙 | ~1.95 eV |
参数 | 尺寸:~1cm, 纯度:高纯 |
应用 | 半导体电子器件,传感器-探测器,光学器件等研究 |
其他性质 | 详情请发邮件至:mknano@126.com. |
合成TlGaSe2晶体照片:
The only commercially available TlGaSe2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaSe2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, TlGaS2, TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, TlGaS2 and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. As a result, these crystals exhibit layered structure with weak vdW coupling between the adjacent layers. In particular, TlGaSe2 is a direct gap semiconductor with optical band gap of 1.87 eV, it exhibits unique structural phase transition from normal (N) to a commensurate (C) state via an intermediate incommensurate (I) phase at 100K and 120K. They exhibit para-to-ferroelectric phase transitions, and also shows ferroelectric and ferroelastic behavior. Crystals come with guaranteed structural phase transitions.
Properties of TlGaSe2 layered crystals
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