The only commercially available TlGaSe₂ vdW crystals have been synthesized at our facilities through float zone technique. TlGaSe₂ semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX₂ (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe₂, TlGaS₂, TlInS₂) and chain (TlInSe₂, TlInTe₂, TlGaTe₂) structures. Stacking of the atoms in TlGaSe₂, TlGaS₂ and TlInS₂ layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. As a result, these crystals exhibit layered structure with weak vdW coupling between the adjacent layers. In particular, TlGaSe₂ is a direct gap semiconductor with optical band gap of 1.87 eV, it exhibits unique structural phase transition from normal (N) to a commensurate (C) state via an intermediate incommensurate (I) phase at 100K and 120K. They exhibit para-to-ferroelectric phase transitions, and also shows ferroelectric and ferroelastic behavior. Crystals come with guaranteed structural phase transitions.

Properties of TlGaSe₂ layered crystals

其他服务：

 公司客户可以提供晶体免费机械剥离和转移技术。