库存: 0 件
碳纳米笼
货号:100838 编号:MK1038
CAS号: 规格:
包装:原包装进口,真空包装 保质期:密封保存6个月+
保存条件:真空密封保存
请选择规格参数
样品名称 | 进口铊掺杂二硫化锡 晶体-TlInS2 TLInS2 |
性质 | 半导体 |
带隙 | ~2.1 eV |
参数 | 纯度:高纯 |
应用 | 半导体电子器件,传感器-探测器,光学器件等研究 |
其他性质 | 详情请发邮件至:mknano@126.com. |
合成TlInS2晶体照片:
The only commercially available TlInS2 vdW crystals have been synthesized at our facilities through float zone technique. TlInS2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, TlGaS2, TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, TlGaS2 and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. As a result, these crystals exhibit layered structure with weak vdW coupling between the adjacent layers. In particular, TlInS2 is a direct gap semiconductor with optical band gap of 3.5 eV, it exhibits rather novel ferroelectric, ferroelastic behavior. Owing to its crystal structure it is also known to be second harmonic generation (SHG) semiconductor.
Properties of TlInS2 crystals
Raman:
其他服务:
公司客户可以提供晶体免费机械剥离和转移技术。