The only commercially available TlInS₂ vdW crystals have been synthesized at our facilities through float zone technique. TlInS₂ semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX₂ (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe₂, TlGaS₂, TlInS₂) and chain (TlInSe₂, TlInTe₂, TlGaTe₂) structures. Stacking of the atoms in TlGaSe₂, TlGaS₂ and TlInS₂ layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. As a result, these crystals exhibit layered structure with weak vdW coupling between the adjacent layers. In particular, TlInS₂ is a direct gap semiconductor with optical band gap of 3.5 eV, it exhibits rather novel ferroelectric, ferroelastic behavior. Owing to its crystal structure it is also known to be second harmonic generation (SHG) semiconductor.

Properties of TlInS₂ crystals

Raman:

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