Zirconium disulfide (ZrS2) is an indirect gap layered semiconductor in the bulk and becomes direct gap semiconductor in monolayer form. They are designed and optimized in the last three years to achieve perfect industrial semiconductor grade materials with: 1) excellent stoichiometry, 2) large single domain size, 3) single phase materials without any mixed phases or amorphous content, 4) perfect layered crystal ideal for exfoliation purposes with impressive mosaic spread 0.08 degrees, 5) unmatched purity -semiconductor grade (5.5N), 99.9995%.

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