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碳纳米笼
货号:100814 编号:MK1014
CAS号: 规格:
包装:原包装进口,真空包装 保质期:密封保存6个月+
保存条件:真空密封保存
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样品名称 | 硫化砷锑SbAsS3单晶 |
性质 | 半导体 |
带隙 | 待实验结果 |
参数 | 尺寸:~5-10mm,纯度高纯,颜色:黑色 |
应用 | 半导体电子器件,传感器-探测器,光学器件等研究 |
其他信息 | 详情请发邮件至:mknano@126.com. |
合成SbAsS3晶体照片:
Our newest class of material: Sb2xAs2(1-x)S3 comes in perfect 1:1:3 stoichiometry consisting of Sb-Sb-S3 atoms. After 34 growth trials in a year, perfect stoichirometry, large single crystal domain size, minimal defect density (1 parts in 100,000 unit cells), and perfected purity level (99.9998%) are achieved. In the bulk form, antimony arsenic sulfide (SbAsS3) is a direct gap semiconductor and has band-gap at around 1.7 eV. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling and can be isolated down to monolayers. The monolayer thickness measures ~0.8 nm and the monolayer SbAsS3 is waiting to be discovered both experimentally and theoretically. Our crystals are large in size ~5-8mm and show remarkable PL characteristics.
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