硫化砷As2S3单晶
货号:100801 编号:MK1001
CAS号:1303-33-9 规格:
包装:原包装进口,真空包装 保质期:密封保存6个月+
保存条件:真空密封保存
库存: 0 件
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货号:100801 编号:MK1001
CAS号:1303-33-9 规格:
包装:原包装进口,真空包装 保质期:密封保存6个月+
保存条件:真空密封保存
请选择规格参数
样品名称 | 三硫化二砷As2S3(Arsenic sulfide)单晶 |
性质 | 半导体 |
带隙 | 块体带隙2.5 eV |
参数 | 尺寸:~10mm, 纯度高纯 |
应用 | 半导体电子器件,传感器-探测器,光学器件等研究 |
其他性质 | 详情请发邮件至:mknano@126.com. |
合成As2S3晶体照片:
As2S3 comes in perfect 2:3 stoichiometry. After 250 growth trials in 3 years, perfect stoichirometry, large domain size, minimal defect density (1 parts in 100,000 unit cells), and perfected purity level (99.9998%) are achieved. In the bulk form, arsenic sulfide (As2S3) is a direct gap semiconductor and has band-gap at around 2.5 eV. Similar to molybdenum disulfide, it has layered structure (lamellar) with weak interlayer coupling and can be isolated down to monolayers. The monolayer thickness measures ~0.8 nm and the monolayer As_S_ is waiting to be discovered both experimentally and theoretically. Our crystals are large in size ~8mm and show remarkable PL characteristics. Our crystals are grown by state-of-the-art growth techniques over 8 weeks and show high crystallinity. Raman spectrum displays very sharp and clear modes with FWHM less than 6cm-1. As2S3 comes ready for exfoliation and is ideal for 2D research.
Space group: P21/c
Layered: Yes / Exfoliates to monolayers
Band gap: ~2.2 eV in bulk
Purity: Semiconductor grade (6N) 99.9999%
Growth technique: Bridgman-Stockbarger
Sample size: ~1 cm
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