样品照片：
衬底和样品信息：
Trilayer Graphene film on SiO?/Si 10 mm x 10 mm (non AB Bernal stacking) - Processed in Clean Room Class 1000
The trilayer graphene product consists of three CVD monolayers produced by multiple transfer on a SiO2/Si substrate. Lower sheet resistance values can be obtained when compared to monolayer samples.
The product can be prepared in other substrate if required (PET, Quartz).
GRAPHENE FILM
- · Transparency: >92 %
- · Color: Transparent
- · Coverage: >95%
- · Number of graphene layers: 3
- · Thickness (theoretical): 1.035 nm
- · Sheet resistance: 126 +/- 6 Ohms/sq (1 cm x 1 cm)
- · Grain size: Up to 10 μm
SUBSTRATE SIO2/SI
- · Dry Oxide Thickness: 300 nm (+/-5%)
- · Type/Dopant: P/Bor
- · Orientation: <100>
- · Resistivity: <0.005 Ohm·cm
- · Thickness: 525 +/- 25 μm
- · Front surface: Single Side Polished
- · Back Surface: Etched
- · Particles: <10@0.3 μm
