铜铟硒晶体-CuIn7Se11

货号:100860 编号:MK10860

CAS号: 规格:~3-4 mm

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货号:100860 编号:MK10860

CAS号: 规格:~3-4 mm

包装:原包装进口 保质期:

保存条件:

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Product Description:

    Ternary copper indium selenide crystallizes in CuIn7Se11 stoichiometry to form perfect van der waals (vdW) layered sheets. They are indirect gap semiconductors with high light-matter interaction strength. Because of its high photoresponsivity and wide spectral response range, layered CuIn7Se11 has been utilized in electronics, photodetectors, catalysis, and energy conversion technologies. Our materials have been synthesized using Bridgman growth technique using Cu2Se, In2Se3, and Se precursors. Each precursors are selected at 5.5N (99.9995%) purity to realize highest grade and single phase CuIn7Se11 crystals. Typical growth process takes 3-5 weeks and each synthesis method only produces ~3-4mm sized crystals. 

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