This product contains tellurene mono- and few-layer thick flakes in isopropanol solution. Synthetic tellurene crystals has been first grown at 99.9995% purity, followed by dispersion into isopropanol (electronic grade chemical at 99.9999% purity) by ultrasonic treatment. Since the starting material (synthetic tellurene crystals) is highly crystalline, ultrasonic treatment to delaminate tellurene layers yields highly crystalline tellurene mono- and few-layers suspended in isopropanol solution. The crystallinity of tellurene nanomaterials has been confirmed by electron energy dispersive spectroscopy (EDAX), Raman spectroscopy (FWHM-1), and scanning electron microscopy (SEM) measurements. Lateral sizes of tellurene flakes deposited onto different substrates range from ~10nm - ~tens of microns while thickness range from 1L to 10s of layers.

Solution type: By default 2Dsemiconductors USA will provide tellurene sheets suspended in isopropanol owing to good dispersion, stability, and high performance. However, if your research requires other solvents, please contact us for more details and schedule for the product delivery.

Solution concentration:  To reduce shipping costs, easy customs agreement / border check-in processes, we ship supersaturated 2D solutions (~80-120 mg/L depending on the type of 2D layers). However, supersaturated solutions can be diluted to produce ~250-500mL of solution to deposit 2D layers onto desired substrates through simple and cost-effective spin-casting process. 

General characteristics of tellurene: Layered tellurium (Te) has a trigonal crystal lattice (see product images) in which individual helical chains of Te atoms are stacked together by van der Waals type bonds and spiral around axes parallel to the [0001] direction at the center and corners of the hexagonal elementary cell [1-2]. Tellurene exhibits a tunable bandgap varying from nearly direct 0.31 eV (bulk) to indirect 1.17 eV (2L) and direct at 1.3 eV (1L) [3]. It has been shown to exhibit metallic behavior under certain conditions and even host DCWs. It has four (two) complex, highly anisotropic and layer-dependent hole (electron) pockets in the first Brillouin zone with an extraordinarily high hole mobility reaching up to theoretical ～1E⁵ cm²/Vs value [1-3]. 

（1）High carrier mobility semiconductor

（2）Tunable IR semiconductor (Eg ranging from 0.3 to 1.3 eV from bulk to monolayers)

（3）2D anisotropic semiconductor