二碘化镍晶体-NiI2-2D

货号:100894 编号:MK10894

CAS号:13462-90-3 规格:

包装:原包装进口 保质期:3个月+

保存条件:室温密封保存

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货号:100894 编号:MK10894

CAS号:13462-90-3 规格:

包装:原包装进口 保质期:3个月+

保存条件:室温密封保存

请选择规格参数

  • 尺寸:~0.5-1cm
购买数量

晶体照片:

NiI2_crystal__08401.png

结构模型图:

NiI2__06242.png

NiI2 Crystal 

    The only magnetic grade NiI2 vdW crystals in the commercial market. Our customers knows that slim amount of defects and magnetic impurities are sufficient to mask the observation of exotic magnetic behavior from 2D magnets. Our vdW magnets are created using state-of-the-art techniques to provide highest magnetic quality crystals through slow but high quality self-flux technique without using any contaminating transport agents.  NiI2 is a layered 2D magnetic materials with exotic magnetic properties. The crystal structure consists of weakly coupled NiI2 individual sheets interacting through weak van der Waals forces. Recent studies have shown that 2D NiI2 sheets are promising 2D intrinsic FM semiconductors. Their exfoliation energy is smaller than that of graphene or MoS2 meaning it is easily to yield monolayers using exfoliation or polymer assisted techniques. Like other Ni based dihalides NiI2 monolayers show semiconducting band gap (theoretical) at around 1.25eV much similar to Si and GaAs range. The FM transition temperature of NiI2 has been predicted one of the highest at Tc~170K in the monolayer form. NiI2 crystals have been synthesized using high purity precursors to attain 6N pure vdW crystals with perfect exfoliation characteristics using self flux zone growth technique. Easy exfoliation characteristics and large single domain sizes make it easier to yield monolayer and few-layer sheets onto other substrates using standard mechanical or polymer assisted exfoliation techniques.   

The properties of NiI2 vdW layered crystals 

Sample sizeEach order contains 0.5-1cm sized crystals
Material properties2D magnet, 2Dsemiconductor
Crystal structureR3m trigonal
Degree of exfoliationvery easy to exfoliate
Production methodHigh magnetic purity (6N or better) through Self flux technique
Other characteristics
  • No transport agents 
  • Low defect concentration
  • High carrier mobility

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