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Description:

  GaGeTe is a layered crystal with unique crystal structure and exciting electronic properties. Its band gap spans from 0.01 eV to 0.7 eV depending on its thickness and its band exhibits high carrier mobility. These attributes make this particular material exciting for infrared (IR) technologies as well as telecom range applications. While theoretically its properties are starting to emerge, fundamental properties of these materials are still at its infancy from an experimental perspective. Our GaGeTe crystals have been synthesized using high pressure flux techniques to yield these unique material systems.

The properties of GaGeTe layered crystals

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