碲化镓晶体-GaTe

货号:100881 编号:MK10881

CAS号:12024-14-5 规格:

包装:1块/包装;原包装进口 保质期:6个月+

保存条件:室温密封保存

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碳纳米笼

货号:100881 编号:MK10881

CAS号:12024-14-5 规格:

包装:1块/包装;原包装进口 保质期:6个月+

保存条件:室温密封保存

请选择规格参数

  • 尺寸>1 cm-Chemical vapor transport (CVT)
  • 尺寸>1 cm-Bridgman growth technique
购买数量

晶体照片:

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XRD:

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Raman:

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PL:

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HRTEM:

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Description:

  Our single crystal monoclinic GaTe (Gallium telluride) crystals come with guaranteed  anisotropy, electronic, and optical grade crystal quality. They are developed at our facilities using three different growth techniques, namely Bridgman growth, chemical vapor transport (CVT), and flux zone growth, to optimize grain sizes and reduce defect concentrations. In contrast to commonly used chemical vapor transport (CVT) technique, flux grown crystals are well known for their structural perfection and electronic/optical performance. Bridgman and flux zone methods both offer similar grade qualities. Each crystal very large in size to last for years, is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization dataset in each sample piece to ensure structural, optical, and electronic consistency. 

Properties of monoclinic GaTe vdW crystals 

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其他服务:

  公司客户可以提供晶体免费机械剥离和转移技术

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