晶体照片：

结构模型：

Description:

  Gallium indium trisulfide or GaInS₃ is a layered vdW semiconductor. Its electronic, magnetic, and optical properties from bulk to monolayer form still remains largely unknown. Our GaInS₃ crystals have been synthesized at 5.8N purity and high single crystalline quality using flux zone growth technique. Resulting crystals are environmentally stable and are ready for exfoliation.

The properties of GaInS3 layered crystals

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