晶体照片：

Description:

CrSeBr is a layered magnetic semiconductor exhibiting highly anisotropic electronic structure. It has been predicted to have a narrow band gap of 0.78 eV. Overall, CrSeBr is a member of CrXBr (X=S, Se) layered crystals and has Pmmn orthorhombic space group crystal structure (see images). Our CrSeBr vdW crystals have been synthesized at perfect 1:1:1 Cr:Se:Br stoichiometry to ensure perfect magnetic, electronic, and optical quality. Crystals have confirmed 99.9995% purity and excellent crystalline characteristics.

The properties of CrSeBr crystals:

其他服务：

  公司客户可以提供晶体免费机械剥离和转移技术。