ALD-GaSe薄膜样品
货号:100894 编号:MK1094
CAS号:12024-11-2 规格:衬底:1*1cm2;样品:5*5mm2
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货号:100894 编号:MK1094
CAS号:12024-11-2 规格:衬底:1*1cm2;样品:5*5mm2
包装:原包装进口 保质期:
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Description:
Multilayer gallium selenide (GaSe) films have been synthesized through atomic layer deposition (ALD) growth to enable large single domain thin films with negligible amount of grain boundaries. GaSe thin films are directly deposited onto double side polished c-cut sapphire substrates but can be transferred onto virtually any substrate choice. GaSe films measure 100s of nanometers in thickness and particularly ideal for thin film geometry measurements such as catalysis, photovoltaics, electronic transport, and others. GaSe films come with guaranteed PL, Raman, and semiconducting response.