MBE-WSe2三角形单晶
货号:100893 编号:MK1093
CAS号:12067-46-8 规格:1*1cm2;样品尺寸:5-25 μm
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货号:100893 编号:MK1093
CAS号:12067-46-8 规格:1*1cm2;样品尺寸:5-25 μm
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Description:
World's first molecular beam epitaxy (MBE) grown MoS2 monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below). MBE growth of MoS2 monolayers take place in a MBE chamber at a base pressure of 8E-9 Torr and deposition rate is extremely slow (5-100 atoms per second) to reach structural perfection. Typical MBE growth produces monolayer thick MoS2 isolated triangles on double-side polished c-cut sapphire. Currently, MBE MoS2 is only offered on sapphire substrates but in the near future our MBE substrates will also include mica, graphite, and gold.