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Description:

World's first molecular beam epitaxy (MBE) grown MoS₂ monolayers. MBE is an epitaxial method for single-crystal quality film deposition which offers high crystallinity and reduced defect density compared to chemical vapor deposition (CVD) or metal-organic chemical vapor deposition (MOCVD) techniques (see HRTEM images below). MBE growth of MoS₂ monolayers take place in a MBE chamber at a base pressure of 8E^-9 Torr and deposition rate is extremely slow (5-100 atoms per second) to reach structural perfection. Typical MBE growth produces monolayer thick MoS₂ isolated triangles on double-side polished c-cut sapphire. Currently, MBE MoS₂ is only offered on sapphire substrates but in the near future our MBE substrates will also include mica, graphite, and gold.