CVD-二维类石墨烯产品>硅基氮化硼/石墨烯异质结
 
硅基氮化硼/石墨烯异质结-BN/Graphene
 
货号: 100049 规格: 1*1cm2
CAS号: 保质期:
编号: MK116 保存条件:
包装: 原包装进口
价格:
现货库存32
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货号 编号 参数 库存 价格

CVD Graphene/CVD Hexagonal Boron Nitride heterostructure on SiO2/Si wafer

 

Properties of Graphene/h-BN Film:

Single Layer Graphene Film on Single Layer h-BN Film transferred onto 285 nm (p-doped) SiO2/Si wafer

Size: 1cmx1cm; 4 pack

The thickness and quality of each film is controlled by Raman Spectroscopy

The coverage of this product is about 98%

The films are continuous, with minor holes and organic residues

High Crystalline Quality

The graphene film is premodominantly single layer (more than 95%) with occasional small multilayer islands (less than 5% bi-layers)

Sheet Resistance: 430-800 Ω/square


Raman:


H-BN TEM:


Properties of Silicon/Silicon Dioxide Wafers:

Oxide Thickness: 285 nm; Color: Violet; Wafer thickness: 525 micron

Resistivity: 0.001-0.005 ohm-cm;Type/Dopant: P/Boron;Orientation: <100>

Front Surface: Polished;Back Surface: Etched

Applications:

Graphene/hBN interfaces are used where the graphene needs to be precisely gated, for increased mobility, and for reduced scattering.

h-BN is appealing as a substrate for graphene-based electronics because its surface is atomically smooth, it is free of dangling bonds, and has an analogous structure to graphene.

Using our h-BN on SiO2/Si wafers in conjuction with graphene will encourage you to explore graphene heterostructures for transistor applications

 Our graphene/h-BN films are manufactured using a PMMA assisted transfer method. Please refer to the references below for more details.

We can offer custom sizes of graphene/h-BN films on a 4" wafer. Please contact us at info@graphenelab.com for more details.

Academic References / Read More

Graphene Growth

Large-Area Synthesis of High-Quality and Uniform Graphene Films on Copper Foils Science 5 June 2009: Vol. 324. no. 5932, pp. 1312 - 1314

Graphene Transfer

Transfer of Large-Area Graphene Films for High-Performance Transparent Conductive Electrodes, Li et.al., Nano Lett., 2009, 9 (12), pp 4359–4363

Toward Clean and Crackless Transfer of Graphene Liang et.al.,ACS Nano, 2011, 5 (11), pp 9144–9153

Graphene/h-BN Heterostructures

Electrical properties and applications of graphene, hexagonal boron nitride (h-BN), and graphene/h-BN heterostructures

Materials Today Physics, Science Direct: Vol 2, September 2017, pp 6-34


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