| 货号 |
编号 |
参数 |
库存 |
价格 |
| 100857 |
MK10857 |
~4-5 mm |
100 |
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| 样品名称 | 进口碲化锆锗晶体-ZrGeTe4 | | 性质 | 半导体 | | 带隙 |
| | 参数 | 尺寸：～4-5mm, | | 应用 | 半导体电子器件，传感器-探测器，光学器件等研究 | | 其他性质 | 详情请发邮件至：mknano@126.com. |
碲化锆锗晶体ZrGeTe4
Product Description： ZrGeTe4 crystal is a layered anisotropic semiconductor with the predicted bandgap of 0.4 eV. While it is layered and can be exfoliated down to few- and monolayers, their properties remain largely unknown. Our ZrGeTe4 vdW crystals are synthesized using flux zone growth technique at unparalleled 99.9999% confirmed purity rates. Crystals are cut in c-axis and thus are ready to exfoliate onto desired substrates.
Summary of ZrGeTe4 vdW crystals
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公司客户可以提供晶体免费机械剥离和转移技术。
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