货号 |
编号 |
参数 |
库存 |
价格 |
100855 |
MK10855 |
~1 cm |
100 |
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|
样品名称 | 进口二硫化锗晶体GeS2 | 性质 | 半导体 | 带隙 |
| 参数 | 尺寸:~1 cm, | 应用 | 半导体电子器件,传感器-探测器,光学器件等研究 | 其他性质 | 详情请发邮件至:mknano@126.com. |
晶体照片:
Product Description: Germanium disulfide (GeS2) is a promising anisotropic semiconductor with unique vdW structure as shown in our product description. GeS2 vdW crystals were grown using chemical vapor transport technique at high pressures and temperatures over 2 months to ensure high crystallinity and vdW nature. The crystals large is size and mea
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