进口二维半导体单晶>100mg-六方氮化硼晶体h-BN
 
100mg-六方氮化硼晶体h-BN
 
货号: 100740202 规格: 0.3-0.6 mm
CAS号: 10043-11-5 保质期:
编号: MK89302 保存条件:
包装: 原包装进口
价格:
现货库存32
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货号 编号 参数 库存 价格
样品名称                           六方氮化硼h-BN单晶
 性质

绝缘体

结构:Hexagonal

 带隙禁带宽度:~5.9 eV
 参数

尺寸:0.3-0.6 mm

包装:100 mg

颜色: 白色透明

 应用半导体电子器件,微型电容器介电层,光学器件,绝缘导热衬底等研究
 其他信息

详情请发邮件至:mknano@126.com.


合成h-BN晶体照片:


包装照片:


光学显微镜照片:



Raman光谱:


Product Description:

Synthetic hexagonal boron nitride (hBN) single-crystals  with single-crystal domains exceeding 500 micrometers,  offered in two grades.

Grade A: Millimetre-sized crystals with domain sizes exceeding 0.5mm. More than 20 transparent crystals in a clear glass bottle.

Hexagonal boron nitride has emergent as an important candidate for use in graphene research. In two dimensional form, relatively thick flakes (>20nm) of hBN serve as a high quality substrate enabling graphene to reach its theoretical mobility values, which exceeds one hundred thousand centimetre squared per volt second. Thinner flakes (<5nm) can serve as a separator between two graphene layers in order to study interesting mesoscopic phenomena. For example, electron tunneling and coulomb drag include two of the interesting phenomena observed in such systems.

Our hexagonal boron nitride is of the highest purity enabling the its use for such research. The atomically thin flakes prepared by mechanical exfoliation of our flakes show large dimensions (>100um) and atomically flat terraces, an imperative requirement for use in this research field, as shown in the example pictures above. The sharp peak in Raman spectrum is a further testament to the purity of our hBN.

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