进口二维半导体单晶>硅化锑SbSi晶体
 
硅化锑晶体SbSi
 
货号: 100864 规格:
CAS号: 保质期: 密封保存6个月+
编号: MK1064 保存条件: 真空密封保存
包装: 原包装进口,真空包装
价格:
现货库存32
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货号 编号 参数 库存 价格
100864 MK1064 尺寸:~1cm 100 登录查看

 样品名称 硅化锑SbSi晶体
  性质 铁磁半导体
 带隙 待实验确定
  参数

 尺寸:~1cm

  应用 半导体电子器件,传感器-探测器,非线性光学,STM-AFM实验,光学器件等研究
  其他信息

 详情请发邮件至:mknano@126.com.

 硅化锑SbSi晶体照片:


Product Description

     Commercially available first ferroelectric semiconductor SbSi 1D and 2D vdW crystals. Bulk V-VI-VII semiconductor has a orthorhombic structure with the space group of Pna21, and crystallises in 1D chains which are held together by van der Waals interaction. 1D crystals by exfoliation or mechanical cleavage. It has been shown to be luminescent semiconductor in the bulk from (Eg~1.6 eV), however material characteristics of monolayer thick SbSi still remain unknown. It has been shown that these materials possess good ferroelectric behavior (ferroelectric response in monolayers is still unknown), exhibit photoferroic effects, good photoluminescence and light-matter characteristics, and electronic behavior. SbSi crystals have been synthesized using flux zone which similar to chemical vapor transport technique except no transport agents are used to achieve high crystalline and and contamination free materials. Typical product measures nearly 1cm in size. It is extremely easy to exfoliate onto desired substrates. They are environmentally stable and suitable for electronic, optical, and ferroelectrics research.

Material characteristics

(1) Ferroelectric semiconductor

(2) 2D anisotropic semiconductor

(3) High mobility semiconductor

(4) Optically luminescent 

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