进口二维半导体单晶>硫化亚锡SnS 晶体
 
硫化亚锡晶体SnS
 
货号: 100863 规格:
CAS号: 保质期: 密封保存6个月+
编号: MK1063 保存条件: 真空密封保存
包装: 原包装进口,真空包装
价格:
现货库存32
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货号 编号 参数 库存 价格
100863 MK1063 尺寸:~1cm 100 登录查看

 样品名称 硫化亚锡SnS晶体
  性质 半导体
 带隙 待实验确定
  参数

 纯度99.995%

方法1:flux vapor transport,缺陷相对多一点1*1010-1011/cm2尺寸:>1cm;

方法2Bridgman technique尺寸:8-10mm;低缺陷

  应用 半导体电子器件,传感器-探测器,非线性光学,STM-AFM实验,光学器件等研究
 其他信息

 详情请发邮件至:mknano@126.com.

 硒化亚锡晶体照片:


Product Description

Our single crystal SnS (Tin sulfide) crystals come with guaranteed optical, electronic, and structural anisotropy. They are developed at our facilities using state-of-art flux zone techniques. hey are developed at our facilities using state-of-art flux zone techniques. Each growth takes close to three months to provide you perfected crystals that does not contain any transport agent (halide) impurities. In contrast to commonly used chemical vapor transport (CVT) technique, flux grown crystals are well known for their structural perfection and electronic/optical performance. Each crystal is highly crystalline, oriented in 0001 direction, and easy to exfoliate. Our R&D staff takes characterization data set in each sample piece to ensure structural, optical, and electronic consistency. 

Bridgman vs Flux zone: While both growth techniques produce superior quality materials, we recommend Bridgman grown materials as they exhibit higher electronic mobility, larger single-crystal domain size,  and lower defect concentrations. Bridgman grown samples measure 8-10mm in size. In contrast flux zone grown samples are larger in size >1 cm much higher quality compared to chemical vapor transport (commonly used method by our vendors) but exhibit higher defect concentrations (~1E10-1E11 cm-2) compared to Bridgman grown samples. Chemical vapor transport grown samples are strongly discouraged as they contain substantial amount of halide and point defects, as well as unwanted amorphous minority phases.

Characteristics of vdW SnS crystals

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