The only commercially available TlGaTe2 vdW crystals have been synthesized at our facilities through float zone technique. TlGaTe2 semiconductors belong to the thallium chalcogenides family with the chemical formula TlBX2 (where B=In or Ga, X=S, Se or Te). Members of this family have both layered (TlGaSe2, TlGaS2, TlInS2) and chain (TlInSe2, TlInTe2, TlGaTe2) structures. Stacking of the atoms in TlGaSe2, TlGaS2 and TlInS2 layered crystals is arranged in the form of two twisted anionic layers with the weak bonded Tl(+1) cations located in the trigonal cavities between them. Recently, low-temperature rhombohedral ordered phase of Tl-based III–V–VI2 ternary chalcogenides has been predicted to be topologically nontrivial and a terminated surface with a single Dirac cone has been identified through first-principles calculations (Phys. Rev. Lett. 105, 036404). TlGaTe2 crystals exhibit anisotropic structural, electronic, and optical properties with the band gap of 1.2 eV.
TlGaTe2晶体性能:
其他服务:
公司客户可以提供晶体免费机械剥离和转移技术。