| 货号 |
编号 |
参数 |
库存 |
价格 |
| 100929 |
MK10929 |
～10 mm |
100 |
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晶体照片： 
XRD: 
晶体结构模型： 
p-type GaSe Our p-type GaSe crystals are grown using Bridgman growth technique and the crystal were doped to P-type using Cd (cadmium) atoms at around 1E18cm-3 range. P-type GaSe crystals exhibit highly layered characteristics and are ideal for exfoliation, device fabrication, optics, and other optoelectronics related experiments. The physical properties of p-type GaSe crystals | Sample size | Around 7-10mm in size | | Properties | Direct gap semiconductor | | Exfoliation characteristics | Very easy | | Production method | Bridgman growth technique (Cd atom as dopant)
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